The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2018
Filed:
Jun. 21, 2013
Applicant:
First Solar, Inc., Tempe, AZ (US);
Inventors:
Anil Raj Duggal, Niskayuna, NY (US);
Joseph John Shiang, Niskayuna, NY (US);
William Hullinger Huber, Niskayuna, NY (US);
Adam Fraser Halverson, Albany, NY (US);
Assignee:
First Solar, Inc., Tempe, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0272 (2006.01); H01L 31/0296 (2006.01); H01L 31/065 (2012.01); H01L 31/073 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0272 (2013.01); H01L 31/02966 (2013.01); H01L 31/065 (2013.01); H01L 31/073 (2013.01); H01L 31/1832 (2013.01); Y02E 10/543 (2013.01);
Abstract
A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes cadmium, tellurium, and selenium. A semiconductor layer is further disposed on the absorber layer, wherein a valence band offset between the semiconductor layer and the absorber layer is less than about 1.3 electron Volts, and a band gap of the semiconductor layer is in a range from about 1.2 electron Volts to about 3.5 electron Volts.