The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2018
Filed:
Oct. 15, 2012
Aya Nishiyama, Tokyo, JP;
Hiroyuki Fuchigami, Tokyo, JP;
Hidetada Tokioka, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
To provide a solar cell that reduces occurrence of a defect and has high photoelectric conversion efficiency. The solar cell includes a silicon substrate such as an n-type single-crystal silicon substrate single crystal with pyramid-shaped irregularities P formed thereon, and an amorphous or microcrystal semiconductor layer formed on the single-crystal silicon substrate. A flat part F is formed in a valley portion of the pyramid-shaped irregularities P provided on a surface of the single-crystal silicon substrate. With this configuration, a steep angle of 70° to 85° of a concave portion formed by a substantially (111) surface can be widened to between 115° and 135°. Accordingly, a change of atomic step morphology attributable to a rounded shape can be eliminated, thereby enabling to reduce epitaxial growth and defects in the amorphous or microcrystal semiconductor layer.