The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2018

Filed:

Jul. 01, 2016
Applicant:

Sunpower Corporation, San Jose, CA (US);

Inventors:

Benjamin Ian Hsia, Fremont, CA (US);

David Aaron Randolph Barkhouse, Menlo Park, CA (US);

Todd Richards Johnson, San Jose, CA (US);

Michael Cudzinovic, Sunnyvale, CA (US);

Assignee:

SunPower Corporation, San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01L 31/0216 (2014.01); H01L 31/068 (2012.01); H01L 31/0236 (2006.01); H01L 31/0232 (2014.01);
U.S. Cl.
CPC ...
H01L 31/022441 (2013.01); H01L 31/02168 (2013.01); H01L 31/02327 (2013.01); H01L 31/02363 (2013.01); H01L 31/0682 (2013.01); H01L 31/1864 (2013.01); Y02E 10/50 (2013.01); Y02E 10/547 (2013.01);
Abstract

Methods of fabricating a solar cell including metallization techniques and resulting solar cells, are described. In an example, a first and second semiconductor regions can be formed in or above a substrate, where a separation region is disposed between the first and second semiconductor regions. A protective region can be formed over the separation region. A first metal layer can be formed over the substrate, where the protective region prevents and/or inhibits damage to the separation region during the formation of the first metal layer. Conductive contacts can be formed over the first and second semiconductor regions.


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