The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2018
Filed:
Jan. 23, 2017
Applied Materials, Inc., Santa Clara, CA (US);
Jrjyan Jerry Chen, Campbell, CA (US);
Soo Young Choi, Fremont, CA (US);
Dong-Kil Yim, Pleasanton, CA (US);
Yan Ye, Saratoga, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
The present invention generally relates to a method of manufacturing a TFT. The TFT has an active channel that comprises IGZO or zinc oxide. After the source and drain electrodes are formed, but before the passivation layers or etch stop layers are deposited thereover, the active channel is exposed to an NO or Oplasma. The interface between the active channel and the passivation layers or etch stop layers are either altered or damaged during formation of the source and drain electrodes. The NO or Oplasma alters and repairs the interface between the active channel and the passivation or etch stop layers.