The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2018
Filed:
Jun. 15, 2016
Fuji Electric Co., Ltd., Kanagawa, JP;
Noriaki Yao, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
It is aimed to reduce a current concentration at the edge of the contact electrode. Provided is a semiconductor device including a semiconductor layer, a first trench electrode formed in the semiconductor layer on a front surface side thereof, and a second trench electrode formed in the semiconductor layer on the front surface side thereof so as to oppose the first trench electrode. Here, the first trench electrode is formed in a mesh-like pattern. The semiconductor layer may further include a first-conductivity-type region and a second-conductivity-type region having a different conductivity type than the first-conductivity-type region. The first trench electrode may be electrically connected to the first-conductivity-type region, and the second trench electrode may be electrically connected to the second-conductivity-type region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile