The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2018
Filed:
Aug. 19, 2016
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Richard Mauritzson, Meridian, ID (US);
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Abstract
Various embodiments of the present technology may comprise a method and device for a multi-source/drain transistor for use in an image sensor. The device may comprise an active region, wherein the active region comprises three doped regions. Two of the three doped region may be floating diffusion active regions, wherein each floating diffusion active region is connected to a photosensitive element. The device may comprise a multi-branch channel defined by the area underlying a gate region and substantially surrounded by the doped regions. During operation the electron path may form an 'L' shape within the channel.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile