The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2018

Filed:

Dec. 23, 2016
Applicant:

Tela Innovations, Inc., Los Gatos, CA (US);

Inventors:

Scott T. Becker, Scotts Valley, CA (US);

Jim Mali, Morgan Hill, CA (US);

Carole Lambert, Campbell, CA (US);

Assignee:

Tela Innovations, Inc., Los Gatos, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/412 (2006.01); H01L 27/118 (2006.01); H01L 27/11 (2006.01); G11C 5/06 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01); G06F 17/50 (2006.01); H01L 27/088 (2006.01); H01L 23/538 (2006.01); H01L 23/498 (2006.01); H01L 21/8234 (2006.01); H01L 23/528 (2006.01); H01L 27/105 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11807 (2013.01); G06F 17/5068 (2013.01); G06F 17/5072 (2013.01); G11C 5/06 (2013.01); G11C 11/412 (2013.01); H01L 21/823475 (2013.01); H01L 23/49844 (2013.01); H01L 23/528 (2013.01); H01L 23/5386 (2013.01); H01L 27/0207 (2013.01); H01L 27/0218 (2013.01); H01L 27/088 (2013.01); H01L 27/092 (2013.01); H01L 27/1052 (2013.01); H01L 27/11 (2013.01); H01L 27/1104 (2013.01); H01L 2027/11853 (2013.01); H01L 2027/11875 (2013.01); H01L 2027/11887 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A first conductive structure forms gate electrodes of a first transistor of a first transistor type and a first transistor of a second transistor type. A second conductive structure forms a gate electrode of a second transistor of the first transistor type. A third conductive structure forms a gate electrode of a second transistor of the second transistor type. A fourth conductive structure forms a gate electrode of a third transistor of the first transistor type. A fifth conductive structure forms a gate electrode of a third transistor of the second transistor type. A sixth conductive structure forms gate electrodes of a fourth transistor of the first transistor type and a fourth transistor of the second transistor type. The second and third transistors of the first transistor type and the second and third transistors of the second transistor type are electrically connected to form a cross-coupled transistor configuration.


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