The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2018

Filed:

Dec. 21, 2011
Applicants:

Seung-jin Yeom, Gyeonggi-do, KR;

Noh-jung Kwak, Gyeonggi-do, KR;

Chang-heon Park, Gyeonggi-do, KR;

Sun-hwan Hwang, Gyeonggi-do, KR;

Inventors:

Seung-Jin Yeom, Gyeonggi-do, KR;

Noh-Jung Kwak, Gyeonggi-do, KR;

Chang-Heon Park, Gyeonggi-do, KR;

Sun-Hwan Hwang, Gyeonggi-do, KR;

Assignee:

HYNIX SEMICONDUCTOR INC., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10855 (2013.01); H01L 27/10885 (2013.01);
Abstract

A semiconductor device includes first conductive patterns adjacent to each other and isolated by a trench including first and second trenches, a second conductive pattern formed in the first trench, and an insulating pattern partially filling the second trench under the second conductive pattern and formed between the first conductive patterns and the second conductive pattern.


Find Patent Forward Citations

Yeom, Seung-Jin. (2018). Semiconductor device with damascene bit line and method for manufacturing the same (U.S. Patent No. 9871045). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9871045

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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