The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2018
Filed:
Dec. 07, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Chang-Sun Hwang, Hwaseong-si, KR;
Ja-Eung Koo, Yongin-si, KR;
Jong-Hyung Park, Gunpo-si, KR;
Ho-Young Kim, Seongnam-si, KR;
Leian Bartolome, Hwaseong-si, KR;
Bo-Un Yoon, Seoul, KR;
Hyoung-Bin Moon, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A method of manufacturing a semiconductor device according to one or more exemplary embodiments of the present inventive concept includes forming a plurality of dummy gates on a substrate. Each of the dummy gates includes a gate mask disposed on an upper surface of each of the dummy gates. A spacer is disposed on at least two sides of the dummy gates. An insulating interlayer is formed on the gate mask and the spacer. A first polishing including chemical mechanical polishing is performed on portions of the gate mask and the insulating interlayer by using a slurry composite having a first mixing ratio. A second polishing including chemical mechanical polishing is formed on remaining portions of the gate mask and the insulating interlayer to expose upper surfaces of the plurality of dummy gates, by using a slurry composite having a second mixing ratio.