The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2018

Filed:

Jun. 08, 2015
Applicants:

Sang-wan Nam, Hwaseong-si, KR;

Wandong Kim, Seoul, KR;

Inventors:

Sang-Wan Nam, Hwaseong-si, KR;

Wandong Kim, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 16/24 (2006.01); G11C 16/08 (2006.01); G11C 16/04 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 11/5628 (2013.01); G11C 16/0483 (2013.01); G11C 16/24 (2013.01); G11C 16/08 (2013.01);
Abstract

A nonvolatile memory device includes a memory cell array, an address decoder, a read & write circuit and control logic. The memory cell array includes a plurality of memory blocks including a plurality of cell strings, each cell string including a plurality of memory cells stacked in a direction perpendicular to a substrate. The control logic controls operations so that in a program operation, when the selected word line satisfies a precharge condition, a program voltage to be applied to the selected word line is applied before a pass voltage to be applied to an unselected word line.


Find Patent Forward Citations

Loading…