The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2018
Filed:
Mar. 31, 2015
Toshiba Memory Corporation, Tokyo, JP;
Raja V. S. Halaharivi, San Jose, CA (US);
Tony Chheang, San Jose, CA (US);
Dishi Lai, San Jose, CA (US);
Fred Au, Fremont, CA (US);
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A data storage device includes a non-volatile semiconductor storage device and a controller that is configured to perform interleaving of small reads with large reads and small writes with large writes. In the example of reads, the controller receives a sequence of read commands including a first read command having a read size larger than a read threshold size and a second read command having a read size smaller than the read threshold size, and issue first and second read requests in succession to read data of a predetermined size less than the read threshold size, from the non-volatile semiconductor storage device. The interleaving is achieved by issuing the first read request to execute the first read command and the second read request to execute the second read command. As a result of this interleaving, the second read command will have a chance to complete earlier than the first read command even though it was received by the controller later in time.