The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2018
Filed:
Jun. 24, 2015
Sharp Kabushiki Kaisha, Sakai, Osaka, JP;
Hidenobu Kimoto, Sakai, JP;
Tetsuya Tarui, Sakai, JP;
Yoshihiro Seguchi, Sakai, JP;
Takehisa Sugimoto, Sakai, JP;
SHARP KABUSHIKI KAISHA, Sakai, JP;
Abstract
An active matrix substrate in a liquid crystal panel of an FFS mode has a data lineincluding an amorphous Si film, an n+amorphous Si film, a main conductor part, and an IZO film. The main conductor partand the IZO filmare etched at a portion close to the end of a covered region of a photoresist, to form the n+amorphous Si filmlarger than the main conductor partand the IZO film. A pattern of a photomask for a source layer is made larger than a pattern of a photomask for a pixel electrode layer, to form the amorphous Si filmlarger than the n+amorphous Si film. The main conductor partis formed of a molybdenum-based material, and in a layer over the data line, two-layered protective insulating films are formed such that a compressive stress is generated in one film and a tensile stress is generated in the other film. Accordingly, a high-yield active matrix substrate having a common electrode is provided.