The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2018

Filed:

Jul. 15, 2015
Applicant:

Japan Display Inc., Tokyo, JP;

Inventors:

Masateru Morimoto, Tokyo, JP;

Takeshi Sato, Tokyo, JP;

Kimitoshi Ougiichi, Tokyo, JP;

Assignee:

Japan Display Inc., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1345 (2006.01); G02F 1/133 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); G02F 1/1339 (2006.01); H01L 27/12 (2006.01); G02F 1/1333 (2006.01);
U.S. Cl.
CPC ...
G02F 1/13306 (2013.01); G02F 1/1339 (2013.01); G02F 1/1368 (2013.01); G02F 1/13454 (2013.01); G02F 1/136227 (2013.01); H01L 27/1248 (2013.01); G02F 2001/133388 (2013.01);
Abstract

A thin-film transistor includes a gate electrode made of metal, a light transmissive gate insulating film that covers the gate electrode, a semiconductor film that overlaps with the gate electrode through the gate insulating film, and a source electrode and a drain electrode, made of metal, and spaced from each other. The gate electrode and the semiconductor film have respective through-holes communicated with each other so that the gate insulating film enters an inside of the through-holes. The gate insulating film has an area of the inside of the through-holes of the gate electrode and the semiconductor film. The source electrode and the drain electrode pass through the inside of the through-holes of the gate electrode and the semiconductor film so as to overlap with a part of the area of the inside of the through-hole of the gate insulating film and avoid a remaining portion thereof.


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