The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2018
Filed:
Apr. 21, 2014
Applicant:
Elemental Sensor Llc, Aptos, CA (US);
Inventors:
Oliver King-Smith, Aptos, CA (US);
Eric Kerstan Hoobler, Santa Crus, CA (US);
Assignee:
Elemental Sensor LLC, Aptos, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/812 (2006.01); G01N 27/414 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4148 (2013.01); H01L 21/02172 (2013.01); H01L 21/02178 (2013.01); H01L 21/02183 (2013.01); H01L 21/02186 (2013.01); H01L 21/02192 (2013.01); H01L 21/02318 (2013.01);
Abstract
A sol-gel deposition technique that forms ion sensitive layers is compatible with CMOS fabrication methods and is applied to build sensors of concentrations of solutions of selected target ions. The ion sensitive sensor may be formed on an exposed portion of a signal trace of a printed circuit board. Additionally, the ion sensitive layer may be formed within an ion sensitive field effect transistor.