The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2018
Filed:
Apr. 26, 2017
Board of Regents, the University of Texas System, Austin, TX (US);
Deji Akinwande, Austin, TX (US);
Seyedeh Maryam Mortazavi Zanjani, Austin, TX (US);
Mir Mohammad Sadeghi, Austin, TX (US);
Milo Holt, Pflugerville, TX (US);
BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM, Austin, TX (US);
Abstract
The sensitivity of a graphene gas sensor to a gas analyte molecule may be significantly enhanced using molecular doping, which may be as effective as substitutional doping and more effective than electric-field doping. In particular, the room temperature sensitivity of NO-doped graphene to NHwas measured to be comparable to the sensitivity of graphene doped with substitutional boron atoms and superior to that of undoped graphene by an order of magnitude. The detection limit for NO-doped graphene gas sensors was estimated to be about 200 ppb, which may be improved with extended exposure to NO, compared to a detection limit of about 1.4 ppm for undoped graphene. While the stability analysis of NO-doped graphene sensors indicates that the doping method may not be completely stable, molecular doping is nevertheless a candidate technique for sensitivity improvement by enhancing the initial carrier concentration.