The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2018

Filed:

Aug. 26, 2014
Applicant:

Goertek Inc., WeiFang, CN;

Inventors:

Quanbo Zou, WeiFang, CN;

Zhe Wang, WeiFang, CN;

Jifang Tao, WeiFang, CN;

Guanxun Qiu, WeiFang, CN;

Assignee:

GOERTEK INC., WeiFang, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04R 25/00 (2006.01); H04R 19/02 (2006.01); H04R 7/06 (2006.01); H04R 31/00 (2006.01); H04R 19/01 (2006.01); B81B 7/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
H04R 19/02 (2013.01); B81B 7/008 (2013.01); B81C 1/00158 (2013.01); H04R 7/06 (2013.01); H04R 19/013 (2013.01); H04R 31/00 (2013.01); H04R 31/003 (2013.01); B81B 2201/0257 (2013.01); B81B 2201/032 (2013.01); B81B 2203/0127 (2013.01); B81B 2207/012 (2013.01); B81C 2201/0197 (2013.01); H04R 2201/003 (2013.01); H04R 2307/025 (2013.01); H04R 2307/027 (2013.01);
Abstract

The present invention provides a method for manufacturing a thermal bimorph diaphragm and a MEMS speaker with thermal bimorphs, wherein the method comprises the steps of: thermally oxidizing a substrate to obtain an insulating layer thereon and providing a metal layer on the insulating layer; providing a sacrificial layer on the metal layer; providing a first thermal bimorph layer on the sacrificial layer; providing a second thermal bimorph layer on the first thermal bimorph layer; providing a metal connecting layer at the positions on the metal layer where the sacrificial layer is not provided; forming corresponding back holes on the substrate and the insulating layer and releasing the sacrificial layer; forming the thermal bimorph diaphragm which is warped with the first thermal bimorph layer and the second thermal bimorph layer after the sacrificial layer is released.


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