The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2018

Filed:

Nov. 10, 2015
Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo-shi, Kyoto-fu, JP;

Inventors:

Toshio Nishimura, Nagaokakyo, JP;

Takashi Hase, Nagaokakyo, JP;

Keisuke Takeyama, Nagaokakyo, JP;

Hiroaki Kaida, Nagaokakyo, JP;

Keiichi Umeda, Nagaokakyo, JP;

Takehiko Kishi, Nagaokakyo, JP;

Hiroshi Yamada, Nagaokakyo, JP;

Assignee:

MURATA MANUFACTURING CO., LTD., Nagaokakyo-Shi, Kyoto-Fu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/21 (2006.01); H01L 41/047 (2006.01);
U.S. Cl.
CPC ...
H03H 9/21 (2013.01); H01L 41/0478 (2013.01);
Abstract

A vibrating device having tuning fork arms extending in a first direction that are joined to a base portion and are arranged side by side in an second direction. Each of the tuning fork arms has a structure that a silicon oxide layer is laminated on a Si layer made of a degenerate semiconductor, and that an excitation portion is provided on the silicon oxide layer. When a total thickness of the Si layer is denoted by T, a total thickness of the silicon oxide layer is denoted by T, and the temperature coefficient of resonant frequency (TCF) when the silicon oxide layer is not provided on the Si layer is denoted by x, a thickness ratio T/(T+T) is within a range of (−0.0002x−0.0136x+0.0014)±0.05.


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