The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Jun. 16, 2016
Gwangju Institute of Science and Technology, Gwangju, KR;
Myung-Han Yoon, Gwangju, KR;
Kookheon Char, Seoul, KR;
Eui tae Kim, Seoul, KR;
Jae-Hyuk Lee, Gwangju, KR;
GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY, Gwangju, KR;
Abstract
Provided are an organic thin film transistor, a method for manufacturing the same, and a method for recovering insulation thereof. Specifically, the organic thin film transistor includes a substrate, a gate electrode, a semiconductor pattern, a source electrode, a drain electrode and a gate insulation layer. The gate electrode is disposed on the substrate. The semiconductor pattern is electrically insulated with the gate electrode on the substrate. The source electrode and the drain electrode are each electrically connected to the semiconductor pattern on the substrate, and are separated from each other. The gate insulation layer is disposed between the semiconductor pattern and the gate electrode. The gate insulation layer is a sulfur copolymer thin film.