The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Jun. 17, 2015
Canon Anelva Corporation, Kawasaki-shi, Kanagawa, JP;
Takuya Seino, Kawasaki, JP;
Kazumasa Nishimura, Kawasaki, JP;
Hiroki Okuyama, Kawasaki, JP;
Yuichi Otani, Kawasaki, JP;
Yuta Murooka, Kawasaki, JP;
Yoshimitsu Shimane, Kawasaki, JP;
CANON ANELVA CORPORATION, Kawasaki-shi, JP;
Abstract
Provided is a method for manufacturing a magnetoresistive element, including a step of forming a tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes a deposition step of depositing a metal film on top of a substrate, and an oxidation step of subjecting the metal film to an oxidation process. The oxidation step includes holding the substrate having Mg formed thereon, on a substrate holder in a processing container in which the oxidation process is performed, supplying an oxygen gas to the substrate by introducing the oxygen gas into the processing container, at a temperature at which Mg does not sublime, and heating the substrate after the introduction of the oxygen gas.