The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Aug. 15, 2016
Applicant:
SK Hynix Inc., Icheon-Si, KR;
Inventor:
Seung-Mo Noh, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-Si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); H01L 43/08 (2006.01); G06F 12/0831 (2016.01); G11C 11/16 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); G06F 12/0831 (2013.01); G11C 11/161 (2013.01); G11C 11/1653 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); G06F 2212/621 (2013.01); H01L 27/228 (2013.01); H01L 28/75 (2013.01); H01L 43/12 (2013.01);
Abstract
Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a free layer comprising CoFeGeB alloy, and having a changeable magnetization direction that is perpendicular to the free layer; a tunnel barrier layer positioned over the free layer, and configured for enabling electron tunneling; a pinned layer positioned over the tunnel barrier layer, and having a pinned magnetization direction that is perpendicular to the pinned layer; and a bottom layer positioned under the free layer, and having a B2 structure to improve a perpendicular magnetic crystalline anisotropy of the free layer.