The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Oct. 24, 2016
Applicant:
Soitec, Bernin, FR;
Inventor:
Pascal Guenard, Froges, FR;
Assignee:
Soitec, Bernin, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/62 (2010.01); H01L 31/02 (2006.01); H01L 31/075 (2012.01); H01L 31/18 (2006.01); H01L 27/142 (2014.01); H01L 27/15 (2006.01); H01L 31/0304 (2006.01); H01L 33/32 (2010.01); H01L 33/44 (2010.01); H01L 31/054 (2014.01); H01L 31/056 (2014.01); H01L 25/04 (2014.01); H01L 25/075 (2006.01); H01L 31/0352 (2006.01); H01L 31/055 (2014.01); H01L 33/06 (2010.01); H01L 33/12 (2010.01); H01L 33/46 (2010.01); H01L 33/50 (2010.01); H01L 33/58 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 25/042 (2013.01); H01L 25/0753 (2013.01); H01L 27/142 (2013.01); H01L 27/153 (2013.01); H01L 31/02008 (2013.01); H01L 31/03044 (2013.01); H01L 31/03048 (2013.01); H01L 31/035236 (2013.01); H01L 31/055 (2013.01); H01L 31/056 (2014.12); H01L 31/0543 (2014.12); H01L 31/075 (2013.01); H01L 31/1844 (2013.01); H01L 31/1848 (2013.01); H01L 31/1852 (2013.01); H01L 31/1864 (2013.01); H01L 31/1892 (2013.01); H01L 33/007 (2013.01); H01L 33/0075 (2013.01); H01L 33/0079 (2013.01); H01L 33/0095 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01); H01L 33/44 (2013.01); H01L 33/46 (2013.01); H01L 33/502 (2013.01); H01L 33/58 (2013.01); H01L 27/156 (2013.01); H01L 33/20 (2013.01); H01L 2224/18 (2013.01); H01L 2924/3512 (2013.01); H01L 2933/0016 (2013.01); Y02E 10/548 (2013.01);
Abstract
The disclosure relates to a manufacturing method comprising the formation of elemental LED or photovoltaic structures on a first substrate, each comprising at least one p-type layer, an active zone and an n-type layer, formation of a first planar metal layer on the elemental structures, provision of a transfer substrate comprising a second planar metal layer, assembly of the elemental structures with the transfer substrate by bonding of the first and second metal layers by molecular adhesion at room temperature, and removal of the first substrate.