The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2018

Filed:

Jan. 23, 2017
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Lorenzo Zini, Regensburg, DE;

Bernd Boehm, Obertraubling, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/101 (2006.01); H01L 21/00 (2006.01); H01L 33/24 (2010.01); H01L 25/16 (2006.01); H01L 33/00 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/24 (2013.01); H01L 25/167 (2013.01); H01L 33/0095 (2013.01); H01L 33/20 (2013.01); H01L 2924/0002 (2013.01);
Abstract

The invention relates to a method for separating regions of a semiconductor layer and for introducing an outcoupling structure into an upper side of the semiconductor layer, the outcoupling structure being provided to couple light out of the semiconductor layer. The upper side of the semiconductor layer is covered by a mask having first openings for introducing the outcoupling structure and at least a second opening, which is provided to introduce a separating trench into the semiconductor layer. With the aid of an etching method, the outcoupling structure is introduced into the upper side of the semiconductor layer in the region of the first openings and simultaneously a separating trench passing through the semiconductor layer is introduced into the semiconductor layer via the second opening, and a region of the semiconductor layer is separated.


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