The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2018

Filed:

Jan. 07, 2015
Applicants:

Qd Laser, Inc., Kawasaki-shi, Kanagawa, JP;

University of Sheffield, Sheffield, GB;

Inventors:

Kenichi Nishi, Kawasaki, JP;

Takeo Kageyama, Kawasaki, JP;

Keizo Takemasa, Kawasaki, JP;

Mitsuru Sugawara, Kawasaki, JP;

Richard Hogg, Glasgow, GB;

Siming Chen, London, GB;

Assignees:

QD LASER, INC., Kawasaki, JP;

UNIVERSITY OF SHEFFIELD, Sheffield, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/08 (2010.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/08 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01);
Abstract

A semiconductor light-emitting element includes: a lower clad layerthat is provided on a substrate; an active layerthat is provided on the lower clad layerand includes a quantum well layerand a plurality of quantum dotssandwiching a second barrier layertogether with the quantum well layer; and an upper clad layerthat is provided on the active layer, wherein a distance D between the quantum well layerand the plurality of quantum dotsis smaller than an average of distances X between centers of the plurality of quantum dots


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