The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Feb. 01, 2016
AU Optronics Corp., Hsin-Chu, TW;
Liang-Yu Lin, Hsin-Chu, TW;
Chun-Cheng Cheng, Hsin-Chu, TW;
AU OPTRONICS CORP., Hsin-Chu, TW;
Abstract
A thin-film transistor comprises a substrate, a first electrode on the top surface of the substrate, an insulation layer on the top surface of the substrate and covering the first electrode, a semiconductor oxide layer on the top surface of the insulation layer, a protection layer on the top surface of the semiconductor oxide layer, an organic dielectric layer on the top surface of the semiconductor oxide layer and covering the protection layer, a source electrode and a drain electrode both penetrating the organic dielectric layer from the top surface thereof. A channel thickness of the semiconductor oxide layer is not thicker than 20 nanometers. The source electrode contacts the semiconductor oxide layer at the first side of the protection layer and the drain electrode contacts the semiconductor oxide layer at the second side, opposite to the first side, of the protection layer.