The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Aug. 05, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Jin Gyun Kim, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A method of fabricating a fin field effect transistor (FinFET) is provided as follows. A fin structure is formed on a substrate. A gate pattern and a source/drain (S/D) electrode are formed on the fin structure. The gate pattern and the S/D electrode are spaced apart from each other. A blocking layer is on the fin structure to cover the gate pattern and the S/D electrode. A sacrificial pattern is formed on the blocking layer and between the gate pattern and S/D electrode. The sacrificial pattern has a first thickness and a first width. A capping layer is formed on the sacrificial layer. An air gap is formed by removing the sacrificial layer through the capping layer. The air gap is formed between the gate pattern and the S/D electrode and has the first thickness and the first width.