The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Feb. 06, 2017
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Akitaka Soeno, Toyota, JP;
Masaru Senoo, Okazaki, JP;
Takashi Kuno, Kariya, JP;
Satoshi Kuwano, Nagakute, JP;
Noriyuki Kakimoto, Kariya, JP;
Toshitaka Kanemaru, Kariya, JP;
Kenta Hashimoto, Kariya, JP;
Yuma Kagata, Kariya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Abstract
A switching device including a semiconductor substrate including a trench (gate electrode) extending in a mesh shape is provided, and the upper surface of the semiconductor substrate is covered by the interlayer insulating film. Within an element range a contact hole is provided in an interlayer insulating film above each cell region while within a surrounding range an entire upper surface of each cell region is covered by the interlayer insulating film. The first metal layer covers the interlayer insulating film, and has recesses above the contact holes. The insulating protective film covers an outer peripheral side portion of the first metal layer within the surrounding range. The second metal layer covers the first metal layer within an opening of the insulating protective film. Within the surrounding range, a second conductivity-type region extending to below lower ends of the trench and is electrically connected to the body region, is provided.