The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Mar. 10, 2017
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Mayumi Morizuka, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
A nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer including a nitride semiconductor provided between the first semiconductor layer and the second semiconductor layer, the third semiconductor layer being contact with the first semiconductor layer and the second semiconductor layer, and a concentration of acceptor type impurity in the third semiconductor layer is higher than that in the first semiconductor layer and the second semiconductor layer, and including a source electrode and a drain electrode, a gate electrode, a first insulating layer, and a fourth semiconductor layer and a fifth semiconductor layer, wherein the nitride semiconductor device satisfying the following formula 0<d<2[(2∈E)/(qN)].