The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Aug. 19, 2016
Applicant:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Inventor:
Ken Nakata, Fujisawa, JP;
Assignee:
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 29/0843 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01);
Abstract
A nitride semiconductor device is disclosed. The semiconductor device provides the GaN channel layer, the InAlN barrier layer on the GaN channel layer, and the n-type AlGaN layer on the InAlN barrier layer. The source and drain electrodes are formed on the n-type AlGaN layer, while, the gate electrode is formed directly on the InAlN barrier layer. The n-type AlGaN layer has the aluminum (Al) composition greater than 20% at the interface against the InAlN barrier layer, which is greater than the aluminum (Al) composition at the interface against the source electrode.