The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
May. 27, 2016
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventors:
Daiyu Kondo, Kawasaki, JP;
Shintaro Sato, Kawasaki, JP;
Assignee:
FUJITSU LIMITED, Kawasaki-shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01); H01L 23/532 (2006.01); H01L 29/778 (2006.01); H01L 21/04 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66045 (2013.01); H01L 21/0228 (2013.01); H01L 21/0262 (2013.01); H01L 21/02164 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 21/02282 (2013.01); H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 21/02491 (2013.01); H01L 21/02502 (2013.01); H01L 21/02527 (2013.01); H01L 21/02645 (2013.01); H01L 21/043 (2013.01); H01L 23/53276 (2013.01); H01L 29/1606 (2013.01); H01L 29/66015 (2013.01); H01L 29/66742 (2013.01); H01L 29/778 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01); H01L 29/78645 (2013.01); H01L 29/78684 (2013.01); H01L 2924/0002 (2013.01); Y10S 977/734 (2013.01);
Abstract
A semiconductor device including a graphene layer and a method of manufacturing the same are disclosed. A method in which graphene is grown on a catalyst metal by a chemical vapor deposition or the like is known. However, the graphene cannot be used as a channel, since the graphene is in contact with the catalyst metal, which is conductive. There is disclosed a method in which a catalyst film () is formed over a substrate (), a graphene layer () is grown originating from the catalyst film (), an electrode () in contact with the graphene layer () is formed, and the catalyst film () is removed.