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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9865686 B1

PDFFull Text
Date of Patent:
Jan. 09, 2018

Filed:

Aug. 12, 2013

Semiconductor device and manufacturing method therefor

Applicant:

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;

Inventors:

Huaxiang Yin, Beijing, CN;

Huilong Zhu, Poughkeepsie, NY (US);

Xiaolong Ma, Beijing, CN;

Assignee:

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;

Attorney:

Osha Liang LLP

Primary Examiner:

Mark Tornow

Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/20 (2006.01); H01L 21/28 (2006.01); H01L 29/267 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1054 (2013.01); H01L 21/28008 (2013.01); H01L 21/308 (2013.01); H01L 21/30604 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01); H01L 29/20 (2013.01); H01L 29/401 (2013.01); H01L 29/41783 (2013.01); H01L 29/66553 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01); H01L 29/165 (2013.01); H01L 29/267 (2013.01); H01L 29/66545 (2013.01);
Abstract

A semiconductor device includes a fin extending on a substrate along a first direction; a gate extending along a second direction across the fin; and source/drain regions and a gate spacer on the fin at opposite sides of the gate, in which there is a surface layer on the top and/or sidewalls of the fin.

Find Patent Forward Citations

Yin, Huaxiang. (2018). Semiconductor device and manufacturing method therefor (U.S. Patent No. 9865686). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9865686

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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