The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Oct. 12, 2015
Compound semiconductor device, method for producing same, and resin-sealed type semiconductor device
Applicant:
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 21/78 (2006.01); H01L 21/268 (2006.01); B23K 26/361 (2014.01);
U.S. Cl.
CPC ...
H01L 29/0657 (2013.01); B23K 26/361 (2015.10); H01L 21/268 (2013.01); H01L 21/78 (2013.01); H01L 23/293 (2013.01); H01L 23/3142 (2013.01); H01L 2924/0002 (2013.01);
Abstract
In a semiconductor element having a compound semiconductor layer epitaxially grown on a silicon substrate, an object is to suppress generation of deficiency or problems of reliability deriving from the ends of the element that are generated when dividing into semiconductor devices by dicing. A compound semiconductor layer epitaxially grown on a silicon substrate is formed via a buffer layer made of aluminum nitride. In the periphery of the semiconductor device, a scribe lane is present to surround a semiconductor element region. Along the scribe lane, the aluminum nitride layer is covered with a coating film for protection against humidity and moisture.