The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Aug. 12, 2016
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Anup Bhalla, Santa Clara, CA (US);
Hamza Yilmaz, Saratoga, CA (US);
Madhur Bobde, San Jose, CA (US);
Lingpeng Guan, Sunnyvale, CA (US);
Jun Hu, San Bruno, CA (US);
Jongoh Kim, Suwon, KR;
Yongping Ding, Sunnyvale, CA (US);
ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED, Sunnyvale, CA (US);
Abstract
A semiconductor device includes a semiconductor substrate and epitaxial layer of a first conductivity type with the epitaxial layer on a top surface of the substrate. A body region of a second conductivity type opposite the first conductivity type is disposed near a top surface of the epitaxial layer. A first conductivity type source region is inside the body region and a drain is at a bottom surface of the substrate. An inslated gate overlaps the source and body regions. First and second trenches in the epitaxial layer are lined with insulation material and filled with electrically conductive material. Second conductivity type buried regions are positioned below the trenches. Second conductivity type charge linking paths along one or more walls of the first trench electrically connect a first buried region to the body region. A second buried region is separated from the body region by portions of the expitaxial layer.