The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Aug. 22, 2016
Applicant:
Toppan Printing Co., Ltd., Taito-ku, JP;
Inventor:
Ryohei Matsubara, Taito-ku, JP;
Assignee:
TOPPAN PRINTING CO., LTD., Taito-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 29/786 (2006.01); H01L 51/05 (2006.01); H01L 51/56 (2006.01); H01L 51/00 (2006.01); H01L 51/10 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3246 (2013.01); H01L 27/3262 (2013.01); H01L 27/3272 (2013.01); H01L 29/786 (2013.01); H01L 51/0516 (2013.01); H01L 51/56 (2013.01); G02F 1/136209 (2013.01); G02F 1/136286 (2013.01); H01L 51/0004 (2013.01); H01L 51/0022 (2013.01); H01L 51/102 (2013.01); H01L 51/107 (2013.01);
Abstract
A thin film transistor array including a substrate, thin film transistors each including a gate electrode formed on the substrate, a source electrode, a drain electrode, a semiconductor layer formed between the source electrode and the drain electrode, an interlayer insulation film formed on the drain electrode, and an upper pixel electrode formed on the interlayer insulation film, and an insulation layer having light shielding property is formed between adjacent upper pixel electrodes.