The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Feb. 19, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventor:
Yongbum Kwon, Yongin-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 23/528 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10814 (2013.01); H01L 23/528 (2013.01); H01L 27/10823 (2013.01); H01L 27/10855 (2013.01); H01L 27/10876 (2013.01); H01L 27/10885 (2013.01); H01L 27/10888 (2013.01); H01L 29/0649 (2013.01);
Abstract
Semiconductor devices and methods of forming the semiconductor devices are provided. The semiconductor devices may include a bit line provided to cross an active region of a substrate, isolation patterns provided on the substrate to face each other in a direction parallel to the bit line, a storage node contact provided between the isolation patterns to be in contact with a source/drain region provided in an upper portion of the active region, and a spacer provided between the bit line and the storage node contact. Here, the isolation patterns may include a material having an etch selectivity with respect to the spacer.