The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2018

Filed:

Sep. 08, 2015
Applicant:

Samsung Electronics Co., Ltd.;

Inventors:

Ji-Hoon Cha, Seoul, KR;

Sang-Woo Lee, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/161 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 27/0922 (2013.01); H01L 29/0649 (2013.01); H01L 29/161 (2013.01); H01L 21/823878 (2013.01);
Abstract

A semiconductor device is provided as follows. A first fin is formed on a first region of a substrate, extending in a first direction. A second fin is formed on a second region of the substrate, extending in a second direction. A first dual liner is formed on a lateral surface of the first fin. The first dual liner includes a first liner and a second liner. The first liner is interposed between the second liner and the lateral surface of the first fin. A second dual liner is formed on a lateral surface of the second fin. The second dual liner includes a third liner and a fourth liner. The third liner is interposed between the fourth liner and the lateral surface of the second fin. An epitaxial layer surrounds a top portion of the second fin. The first liner and the third liner have different thicknesses.


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