The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Nov. 04, 2016
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
He Lin, Frisco, TX (US);
Kun Chen, Sichuan, CN;
Chao Wu, Sichuan, CN;
Dening Wang, McKinney, TX (US);
Lily Springer, Dallas, TX (US);
Andy Strachan, Santa Clara, CA (US);
Gang Xue, San Jose, CA (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/08 (2006.01); H01L 29/866 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 27/0814 (2013.01); H01L 29/0649 (2013.01); H01L 29/0692 (2013.01); H01L 29/866 (2013.01);
Abstract
A contact array optimization scheme for ESD devices. In one embodiment, contact apertures patterned through a pre-metal dielectric layer over active areas may be selectively modified in size, shape, placement and the like, to increase ESD protection performance, e.g., such as maximizing the transient current density, etc., in a standard ESD rating test.