The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Nov. 13, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Joo-Hee Jang, Hwaseong-si, KR;
Pil-Kyu Kang, Hwaseong-si, KR;
Seok-Ho Kim, Hwaseong-si, KR;
Tae-Yeong Kim, Suwon-si, KR;
Hyo-Ju Kim, Seoul, KR;
Byung-Lyul Park, Seoul, KR;
Jum-Yong Park, Yongin-si, KR;
Jin-Ho An, Seoul, KR;
Kyu-Ha Lee, Yongin-si, KR;
Yi-Koan Hong, Suwon-si, KR;
Abstract
A first insulating layer is formed on a substrate. An opening is formed in the first insulating layer. A barrier layer is formed on the first insulating layer and conforming to sidewalls of the first insulating layer in the opening, and a conductive layer is formed on the barrier layer. Chemical mechanical polishing is performed to expose the first insulating layer and leave a barrier layer pattern in the opening and a conductive layer pattern on the barrier layer pattern in the opening, wherein a portion of the conductive layer pattern protrudes above an upper surface of the insulating layer and an upper surface of the barrier layer pattern. A second insulating layer is formed on the first insulating layer, the barrier layer pattern and the conductive layer pattern and planarized to expose the conductive layer pattern. A second substrate may be bonded to the exposed conductive layer pattern.