The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Feb. 18, 2015
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Maxime Cadotte, Saint-Hyacinthe, CA;
Luc Guerin, Granby, CA;
Van Thanh Truong, Brossard, CA;
Steve Whitehead, Shefford, CA;
Assignee:
GLOBALFOUNDRIES INC, Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
B32B 38/10 (2006.01); B32B 43/00 (2006.01); H01L 21/00 (2006.01); H01L 23/00 (2006.01); B08B 7/00 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); B32B 38/00 (2006.01); B23K 103/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/799 (2013.01); B08B 7/0042 (2013.01); B32B 38/0008 (2013.01); B32B 38/10 (2013.01); B32B 43/006 (2013.01); H01L 21/02076 (2013.01); H01L 21/31127 (2013.01); H01L 24/27 (2013.01); B23K 2203/42 (2015.10); B23K 2203/50 (2015.10); B32B 2457/14 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01057 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/05442 (2013.01); H01L 2924/07025 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/3025 (2013.01); H01L 2924/40501 (2013.01); Y10S 156/93 (2013.01); Y10S 156/941 (2013.01); Y10T 156/11 (2015.01); Y10T 156/1158 (2015.01); Y10T 156/1917 (2015.01);
Abstract
A system for laser ashing of polyimide for a semiconductor manufacturing process is provided. The system includes: a semiconductor chip, a top chip attached to the semiconductor chip by a connection layer, a supporting material, a polyimide glue layer disposed between the supporting material and semiconductor chip, a plasma asher, and an ashing laser configured to ash the polyimide glue on the semiconductor chip.