The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Mar. 11, 2016
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Inventors:
Atsunobu Isobayashi, Yokkaichi Mie, JP;
Akihiro Kajita, Yokkaichi Mie, JP;
Tadashi Sakai, Yokohama Kanagawa, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53276 (2013.01); H01L 21/76885 (2013.01); H01L 21/76886 (2013.01); H01L 21/76834 (2013.01); H01L 23/5226 (2013.01);
Abstract
According to one embodiment, a semiconductor device is disclosed. The device includes a graphene layer containing impurities, and including a first region and a second region. The second region has a resistance higher than a resistance of the first region. The second region includes a side surface of an end of the graphene layer. The device further includes a first plug being in contact with the first region.