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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9865513 B1

PDFFull Text
Date of Patent:
Jan. 09, 2018

Filed:

May. 21, 2014

Semiconductor device manufacturing method

Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Takuichiro Shitomi, Tokyo, JP;

Kazuhisa Koga, Fukuoka, JP;

Satoshi Rittaku, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Tokyo, JP;

Attorney:

Studebaker & Brackett PC

Primary Examiner:

Vu A Vu

Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/205 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/3213 (2006.01); H01L 21/67 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); H01L 21/02274 (2013.01); H01L 21/205 (2013.01); H01L 21/28008 (2013.01); H01L 21/3213 (2013.01); H01L 21/67248 (2013.01); H01L 21/76801 (2013.01);
Abstract

A semiconductor device manufacturing method includes an element forming step of forming an element structure on a front surface of a substrate and forming a back structure on a back surface of the substrate, and a film forming step of performing film forming on a front surface of the element structure while measuring the temperature of the substrate by using a radiation thermometer that applies infrared rays of a wavelength λi to the back structure to obtain an infrared emissivity of the substrate. The back structure has a first layer exposed to the outside and a second layer in contact with the first layer, the refractive index of the second layer being smaller than that of the first layer, and the layer thickness of the first layer is set in a range from (2n−1)λi/8 to (2n+1)λi/8, with n being a positive even number.

Find Patent Forward Citations

Shitomi, Takuichiro. (2018). Semiconductor device manufacturing method (U.S. Patent No. 9865513). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9865513

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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