The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Jun. 27, 2016
Sii Semiconductor Corporation, Chiba-shi, Chiba, JP;
Hitomi Sakurai, Chiba, JP;
Abstract
In a method of manufacturing a semiconductor device, a first photoresist layer is applied on a polycrystalline silicon layer formed on a semiconductor substrate. The first photoresist layer is then patterned and cured with UV rays. The polycrystalline silicon layer is etched, using the first photoresist layer as a mask, to form a gate electrode and a resistive film of the polycrystalline silicon layer. A second photoresist layer is applied on the cured first photoresist layer and patterned to form an opening portion exposing the first photoresist layer. Impurities are ion implanted through the opening portion in the polycrystalline silicon layer. The channeling of impurities implanted during the ion implantation is suppressed by the cured first photoresist layer.