The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2018

Filed:

Nov. 13, 2015
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Xiangjun Tian, Beijing, CN;

Seiji Fujino, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); C23C 16/24 (2006.01); C23C 16/50 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32568 (2013.01); C23C 16/24 (2013.01); C23C 16/50 (2013.01); C23C 16/52 (2013.01); H01J 37/32541 (2013.01); H01J 37/32605 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02689 (2013.01); H01J 2237/3321 (2013.01); H01L 21/02691 (2013.01);
Abstract

A plasma generator, a plasma annealing device, a deposition crystallization apparatus and a plasma annealing process are disclosed. The plasma generator includes: a gas chamber; a gas intake member configured to introduce a gas into the gas chamber; a cathode and an anode that are configured to apply an electric field to the gas introduced into the gas chamber to ionize the gas into plasma; a cooling water circulation member configured to control a temperature of the plasma generator; and a plasma beam outlet disposed on a top face of the gas chamber. The plasma annealing device including the plasma generator can generate a plasma beam, which can be used in annealing to amorphous silicon and crystallize the amorphous silicon to polycrystalline silicon.


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