The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2018

Filed:

Mar. 22, 2017
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Fahad Ahmed, San Diego, CA (US);

Mukund Narasimhan, Bangalore, IN;

Raghav Gupta, Bangalore, IN;

Pradeep Raj, Bangalore, IN;

Rahul Sahu, Bangalore, IN;

Po-Hung Chen, San Diego, CA (US);

Chulmin Jung, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 5/10 (2006.01); G11C 11/419 (2006.01); G11C 11/417 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01); G11C 11/417 (2013.01);
Abstract

A write driver is provided that includes a first write driver inverter that inverts a data signal to drive a gate of a second write driver transistor. The write driver transistor has a terminal coupled to a bit line and another terminal coupled to a boost capacitor. A ground for the first write driver inverter floats during a write assist period to choke off leakage of boost charge from the boost capacitor through the write driver transistor.


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