The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2018

Filed:

May. 20, 2016
Applicant:

SK Hynix Inc., Icheon-Si, KR;

Inventors:

Jung-Hwan Moon, Icheon-si, KR;

Jeong-Myeong Kim, Icheon-si, KR;

June-Seo Kim, Icheon-Si, KR;

Sung-Joon Yoon, Icheon-Si, KR;

Assignee:

SK hynix Inc., Icheon-Si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G06F 3/06 (2006.01); G06F 12/0802 (2016.01); G06F 13/16 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G06F 3/061 (2013.01); G06F 3/0656 (2013.01); G06F 3/0679 (2013.01); G06F 12/0802 (2013.01); G06F 13/1673 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); G06F 2212/2024 (2013.01); G06F 2212/60 (2013.01);
Abstract

This technology provides an electronic device. An electronic device in accordance with an implementation of this document may include a semiconductor memory, and the semiconductor memory may include free layer having a variable magnetization direction; a tunnel barrier layer formed over the free layer; a pinned layer formed over the tunnel barrier layer and having a pinned magnetization direction; an exchange coupling layer formed over the pinned layer; and a magnetic correction layer formed over the exchange coupling layer, wherein the magnetic correction layer comprises a first magnetic layer, a spacer layer and a second magnetic layer that are sequentially stacked, and the first magnetic layer has a saturation magnetization smaller than a saturation magnetization of the second magnetic layer.


Find Patent Forward Citations

Loading…