The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2018

Filed:

Sep. 29, 2014
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Beijing Boe Optoelectronics Technology Co., Ltd., Beijing, CN;

Inventors:

Shaoying Xu, Beijing, CN;

Xuecheng Hou, Beijing, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); G02F 1/155 (2006.01); G02F 1/163 (2006.01);
U.S. Cl.
CPC ...
G02F 1/155 (2013.01); H01L 27/124 (2013.01); H01L 27/1259 (2013.01); G02F 2001/1635 (2013.01);
Abstract

The invention disclose an electrochomism display device and a method of fabricating the same, relates to the field of display technology, and the electrochomism display device may effectively suppress the light-leakage phenomenon in the opening region between adjacent electrochomism pixels, thus the display effect of the electrochomism display device is improved. The electrochomism display device comprises a plurality of eletrochromism pixels, each of the eletrochromism pixels comprises a first conductive layer, an eletrochromism layer, and a second conductive layer sequentially formed on a transparent substrate, an opening region is provided between every two adjacent eletrochromism pixels, wherein a thin film transistor is provided in the opening region, and a gate, a source and a drain of the thin film transistor are made of opaque material.


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