The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
May. 11, 2015
Masahiro Hayashi, Miyagi, JP;
Seiji Sarayama, Miyagi, JP;
Takashi Satoh, Miyagi, JP;
Hiroshi Nambu, Kanagawa, JP;
Chiharu Kimura, Miyagi, JP;
Naoya Miyoshi, Miyagi, JP;
Masahiro Hayashi, Miyagi, JP;
Seiji Sarayama, Miyagi, JP;
Takashi Satoh, Miyagi, JP;
Hiroshi Nambu, Kanagawa, JP;
Chiharu Kimura, Miyagi, JP;
Naoya Miyoshi, Miyagi, JP;
RICOH COMPANY, LTD., Tokyo, JP;
Abstract
A gallium nitride crystal having a hexagonal crystal structure includes a first region located on an inner side of a cross section intersecting c-axis of the hexagonal crystal structure, and a second region surrounding at least a part of the outer periphery of the first region in the cross section. An emission spectrum of each of the first region and the second region with electron beam or ultraviolet light excitation has a first peak including a band edge emission of gallium nitride and a second peak located in a longer wavelength area than the first peak. A peak intensity of the first peak is smaller than a peak intensity of the second peak in the first region, and a peak intensity of the first peak is greater than a peak intensity of the second peak in the second region.