The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2018

Filed:

May. 07, 2015
Applicant:

Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;

Inventors:

Yongtack Kim, Yongin, KR;

Jongwoo Kim, Yongin, KR;

Jiyoung Moon, Yongin, KR;

Minho Oh, Yongin, KR;

Yoonhyeung Cho, Yongin, KR;

Assignee:

Samsung Display Co., Ltd., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D 5/12 (2006.01); C23C 14/58 (2006.01); C23C 14/35 (2006.01); C23C 14/34 (2006.01); C23C 16/04 (2006.01); C23C 14/04 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C23C 14/58 (2013.01); C23C 14/042 (2013.01); C23C 14/3407 (2013.01); C23C 14/3485 (2013.01); C23C 14/352 (2013.01); C23C 16/042 (2013.01); H01J 37/32623 (2013.01);
Abstract

A deposition mask comprises a mask body comprising a plurality of through holes; and a deposition layer formed on external surfaces of the mask body. A method of manufacturing a deposition mask comprises: installing a deposition mask body in a chamber; forming a magnetic field between a plurality of magnet units within the chamber, wherein the deposition mask body is disposed between the magnet units; and applying voltages to first and second sputtering targets comprising a material to generate electric discharge such that particles of the material are sputtered from the first and second sputtering targets and deposited on the deposition mask body, thereby making a deposition mask with a layer of the material. The voltages having different magnitudes are applied to the first and second sputtering targets.


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