The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2018

Filed:

Jul. 26, 2016
Applicant:

Purdue Research Foundation, West Lafayette, IN (US);

Inventors:

Rakesh Agrawal, West Lafayette, IN (US);

Ruihong Zhang, West Lafayette, IN (US);

Bryce Chryst Walker, Hillsboro, OR (US);

Carol Handwerker, West Lafayette, IN (US);

Assignee:

PURDUE RESEARCH FOUNDATION, West Lafayette, IN (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B05D 5/12 (2006.01); C09D 7/12 (2006.01); C01B 19/00 (2006.01); H01L 21/02 (2006.01); H01L 31/032 (2006.01); H01L 31/072 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
C09D 7/1233 (2013.01); C01B 19/002 (2013.01); H01L 21/0256 (2013.01); H01L 21/02557 (2013.01); H01L 21/02568 (2013.01); H01L 21/02601 (2013.01); H01L 21/02628 (2013.01); H01L 31/0326 (2013.01); H01L 31/072 (2013.01); H01L 31/1864 (2013.01); Y02E 10/50 (2013.01);
Abstract

A direct solution method based on a versatile amine-thiol solvent mixture which dissolves elemental metals, metal salts, organometallic complexes, metal chalcogenides, and metal oxides is described. The metal containing and metal chalcogenide precursors can be prepared by dissolving single or multiple metal sources, chalcogens, and/or metal chalcogenide compounds separately, simultaneously, or stepwise. Multinary metal chalcogenides containing at least one of copper, zinc, tin, indium, gallium, cadmium, germanium, and lead, with at least one of sulfur, selenium, or both are obtained from the above-mentioned metal chalcogenide precursors in the form of thin films, nanoparticles, inks, etc. Furthermore, infiltration of metal containing compounds into a porous structure can be achieved using the amine-thiol based precursors. In addition, due to the appreciable solubility of metal sources, metal chalcogenides, and metal oxides in the mixture of amine(s) and thiol(s), this solvent mixture can be used to remove these materials from a system.


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