The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2018

Filed:

Aug. 31, 2015
Applicant:

Honeywell International Inc., Morristown, NJ (US);

Inventors:

Konstantin A. Pokrovski, Orchard Park, NY (US);

Rajiv Ratna Singh, Getzville, NY (US);

Ian Shankland, Randolph, NJ (US);

Hsueh Sung Tung, Getzville, NY (US);

Assignee:

Honeywell International Inc., Morris Plains, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C07C 17/25 (2006.01); C07C 17/20 (2006.01); C07C 17/361 (2006.01);
U.S. Cl.
CPC ...
C07C 17/361 (2013.01); C07C 17/206 (2013.01); C07C 17/25 (2013.01); C07B 2200/09 (2013.01);
Abstract

The present invention discloses high purity E-1-chloro-3,3,3-trifluoropropene (1233zd(E)) and methods to produce the same. More specifically, the present invention discloses the methods of making 1233zd(E) essentially free of toxic impurities (e.g. 2-chloro-3,3,3-trifluoropropene (1233xf), chlorotetrafluoro-propene (1224), and 3,3,3-trifluoropropyne). The present invention further provides methods for making high purity 1233zd(E) with concentration of 1233xf and 1224 at or below 200 parts per million (ppm) and 3,3,3-trifluoropropyne impurities at or below 20 ppm. Formation of 1233xf impurity can be avoided if pure 1,1,1,3,3-pentachloropropane is used as a starting material. It was also found that formation of 1233xf is avoided if a liquid phase manufacturing process is used.


Find Patent Forward Citations

Loading…