The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2018

Filed:

May. 24, 2016
Applicant:

Ngk Insulators, Ltd., Aichi-prefecture, JP;

Inventors:

Jungo Kondo, Miyoshi, JP;

Shoichiro Yamaguchi, Ichinomiya, JP;

Tetsuya Ejiri, Kasugai, JP;

Keiichiro Asai, Nagoya, JP;

Naotake Okada, Anjo, JP;

Assignee:

NGK INSULATORS, LTD., Aichi-prefecture, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/14 (2006.01); G02B 5/18 (2006.01); G02B 6/124 (2006.01);
U.S. Cl.
CPC ...
H01S 5/141 (2013.01); G02B 5/1814 (2013.01); G02B 6/124 (2013.01); H01S 5/14 (2013.01);
Abstract

A grating device includes a support substrate, an optical material layerdisposed on the support substrate and having a thickness of 0.5 μm or more and 3.0 μm or less, a ridge optical waveguide formed by a pair of ridge grooves in the optical material layer and having a light-receiving surface for receiving a semiconductor laser light and a light-emitting surface for emitting light having a desired wavelength, a Bragg gratingcomprising convexes and concaves formed in the ridge optical waveguide, and a propagating portiondisposed between the light-receiving surface and the Bragg grating. The relationships represented by the following Formulas (1) to (4) are satisfied:0.8 nm≦Δλ≦6.0 nm  (1);10 μm≦≦300 μm  (2);20 nm≦≦250 nm  (3); and≧1.8  (4).


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